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SUM110N06-3m9H
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
200
V G S = 10 thr u 7 V
250
200
150
100
50
6V
150
100
50
T C = 125 °C
0
5V
0
25 °C
- 55 °C
0
2
4
6
8
10
0
1
2
3
4
5
6
7
3 00
V D S - D r a i n - t o - S o u r c e V o l t a g e ( V )
Output Characteristics
T C = - 55 °C
0.006
V G S - G a te-to- S o u rce Volt a ge (V)
Transfer Characteristics
250
200
150
100
50
0
25 °C
125 °C
0.005
0.004
0.00 3
0.002
0.001
0.000
V G S = 10 V
0
15
3 0
45
60
75
90
0
20
40
60
8 0
100
120
21000
I D - Dr a in C u rrent (A)
Transconductance
20
I D - Dr a in C u rrent (A)
On-Resistance vs. Drain Current
1 8 000
C i ss
16
V D S = 3 0 V
I D = 110 A
15000
12000
9000
6000
12
8
3 000
0
C o ss
C r ss
4
0
0
10
20
3 0
40
50
60
0
50
100
150
200
250
3 00
3 50
400
V D S - Dr a in-to- S o u rce Volt a ge (V)
Capacitance
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
Q g - Tot a l G a te Ch a rge (nC)
Gate Charge
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